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| AOU412 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications). AOU412L is a Green Product ordering option. AOU412 and AOU412L are electrically identical. TO-251 D Top View Drain Connected to Tab Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.5m (VGS = 10V) RDS(ON) < 11m (VGS = 4.5V) G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B C Maximum 30 20 85 65 200 30 120 100 50 -55 to 175 Units V V A A mJ W C TC=25C G TC=100C B ID IDM IAR EAR PD TJ, TSTG TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Steady-State Steady-State Symbol RJA RJL Typ 105 1 Max 125 1.5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU412 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1.5 85 5.7 8.4 8.7 60 0.72 7.5 10 11 1 85 1600 2.15 Min 30 0.005 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC 10 18 33 9 36 36 ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1320 533 154 0.95 26 1.2 32 16.2 VGS=4.5V, VDS=15V, ID=20A 13.3 3.2 6.6 7.2 12.5 22 6 29.7 29 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with TA =25C. B. The power dissipation P is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper D dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 ID (A) 30 3.5V 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 12 Normalized On-Resistance 11 10 RDS(ON) (m) VGS=4.5V 9 8 7 6 5 4 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V 1.8 1.6 1.4 VGS=4.5V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=20A VGS=10V ID(A) 10V 4.0V 60 50 40 125C 30 25C 20 10 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics VDS=5V VGS=3V 20 1.0E+02 1.0E+01 125C 16 ID=20A RDS(ON) (m) IS (A) 12 125C 8 25C 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E+00 1.0E-01 25C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOU412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 2400 2000 1600 1200 Coss 800 400 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss 1000 RDS(ON) limited 1ms 10ms 10 DC TJ(Max)=175C TA=25C 100s Power (W) 10s 1000 800 600 400 200 0 1E-05 1E-04 0.001 0.01 TJ(Max)=175C TA=25C 100 ID (Amps) 1 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJA RJC=1.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 ID(A), Peak Avalanche Current TA=25C Power Dissipation (W) 0.001 0.01 100 80 60 40 20 0 0.00001 120 100 80 60 40 20 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) tA = L ID BV - V DD Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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